Semiconductor Device Fundamentals Robert F. Pierret
By: Pierret, Robert F
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Reading, Massachusetts Addison Wesley Longman 1996Edition: Primera edición.Description: xxiii, 792 páginas ilustraciones 24 cm.ISBN: 0201543931.Subject(s): Field -- Effect transistors![](/opac-tmpl/bootstrap/images/filefind.png)
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Item type | Current location | Collection | Call number | Vol info | Copy number | Status | Date due | Barcode | Item holds |
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Biblioteca Central | General | 621.3815284 / P615s (Browse shelf) | Ej. 1 | Available | 900000002843 | |||
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Biblioteca Central | General | 621.3815284 / P615s (Browse shelf) | 1996/Primera edición. | Ej. 2 | Available | 900000014134 |
Incluye referencias bibliográficas e índice.
Semiconductor Fundamentals – Semiconductors : A General Introduction – General material properties -- Crystal Structure -- Carrier Modeling – The Quantization Concept -- Carrier Properties -- Carrier Action – Drift -- Diffusion -- Recombination–Generation – Equations of State -- Supplemental Concepts -- Basics of Device Fabrication – Fabrication Processes -- pn Junction Diodes -- pn Junction Electrostatics -- pn Junction Diode: I – v Characteristics – pn Junction Diode: Small-Signal Admittance -- pn Junction Diode : Transient Response -- Optoelectronic Diodes -- BJTs and Other Junction Devices -- BJT Static Characteristics -- BJT Dynamic Response Modeling -- PNPN Devices -- MS Contacts and Schottky Diodes -- Field Effect Devices -- MOS fundamentals -- MOSFECTs- The Essentials -- Nonideal MOS -- Modern FET Structures -- Appendices.
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