000 01404nam a22002657a 4500
003 CO-NeUS
005 20180209100436.0
008 150213e1993 xxuad f |||| 00| 0 eng d
020 _a0138252092
040 _aCO-NeUS
_bEspañol
041 _aspa
082 _221
_a621.38152
_bB230s
100 _aBar-Lev, Adir
_929699
245 _aSemiconductors and Electronic Devices
_cAdir Bar-Lev
250 _a3th. edition.
264 _aNew York
_bPrentice Hall
_c1993
300 _axix, 469 páginas : ilustraciones
_c24 cm.
504 _aIncluye referencias bibliográficas e índice.
505 _aSemiconductors and their preparation for engineering use -- Crystal structure and valance model of a pure and doped semiconductor -- Mobility and electrical conductivity -- Measuring some basic electrical prameters of bulk semiconductors -- Energy bands in solids -- The PN junction, heterojunctions and metal -semiconductor contacts -- Field effect transistors (FETs) -- Amplification and switching: transistor models and equivalent circuits -- Semiconductors and integrated circuit technology -- Power semiconductor devices -- Semiconductors in optoelectronics -- Devices of the future --
650 _aSemiconductors
_9131252
650 _aElectronic apparatus and aplicances
_9108093
650 _aSemiconductores
_9131251
650 _aAparatos electrónicos y aplicaciones
_9100642
942 _cCG
999 _c37128
_d37128