| 000 | 01053nam a22002417a 4500 | ||
|---|---|---|---|
| 003 | CO-NeUS | ||
| 005 | 20180209100435.0 | ||
| 008 | 150210e1991 xxuad f |||| 00| 0 eng d | ||
| 020 | _a003009559X | ||
| 040 |
_aCO-NeUS _bEspañol |
||
| 041 | _aeng | ||
| 082 |
_221 _a621.38152 _bW242s |
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| 100 |
_aWarner, R. M., Jr. _990540 |
||
| 245 |
_aSemiconductor –Device Electronics _cR. M. Warner, Jr., B. L. Grung |
||
| 264 |
_aOrlando (Florida) _bHolt, rinehart and Wiston _c1991 |
||
| 300 |
_axix, 904, 29 páginas : ilustraciones _c24 cm. |
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| 504 | _aIncluye referencias bibliográficas e índice. | ||
| 505 | _aFoundation of Modern Electronics -- Electric Charge, Field, and Energy -- Equations Dealing with Moving and Motioniess Charges -- Bulk Properties of Semiconductors -- Energy Bnads -- Electron Distributions in Conductors and Intrinsic Silicon -- PN Junctions -- The Bipolar Junction Transistor -- The MOSFET -- | ||
| 650 |
_aSemiconductors _9131252 |
||
| 650 |
_aSemiconductores _9131251 |
||
| 700 |
_aGrung, B. L. _947811 |
||
| 942 | _cCG | ||
| 999 |
_c37112 _d37112 |
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