| 000 | 01126nam a22002417a 4500 | ||
|---|---|---|---|
| 003 | CO-NeUS | ||
| 005 | 20180209100434.0 | ||
| 008 | 150128b1997 xxuad f |||| 00| 0 eng d | ||
| 020 | _a0256208697 | ||
| 040 |
_aCO-NeUS _bEspañol |
||
| 041 | _aeng | ||
| 082 |
_221 _a537.622 _bN26se |
||
| 100 |
_aNeamen, Donald A. _970168 |
||
| 245 |
_aSemiconductor Physics & Devices _bBasic Principles _cDonald A. Neamen |
||
| 250 | _a2 th. Edition | ||
| 264 |
_aBoston _bIrwin McGraw Hill _c1997 |
||
| 300 |
_axx, 618 páginas : ilustraciones _c21 cm. |
||
| 504 | _aIncluye referencias bibliográficas e índice. | ||
| 505 | _aThe Crystal Structure of Solids -- Introduction to the Quantum Theory of Solids -- The Semiconductor in Equilibrium -- Carrier Transport Phenomena -- Nonequilibrium Excess Carries in Semiconductors -- The pn Junction -- Metal-Semiconductor and Semiconductor Heterojunctions -- The Bipolar Transistor -- Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor -- The Junction Field-Effect Transistor -- | ||
| 650 |
_aSemiconductors _9131252 |
||
| 650 |
_aSemiconductores _9131251 |
||
| 942 | _cCG | ||
| 999 |
_c37088 _d37088 |
||