Roulston, David J.
An Introduction to the Physics of Semiconductor Devices / David J. Roulston - xvii, 290 p. : il. ; 25 cm. + 1 disco compacto (CD ROM) - Ingeniería de Sistemas y Series Eléctricas .
Overview -- Introductory Remarks -- History of semiconductor devices -- Material Prperties and Basic P-N Junction Relations -- The Semiconductor in Thermal Equilibrium -- P-N Junction Diodes -- The P+-N Narrow-Base Diode -- Low Forward Bias -- Bipolar Junction Transistor -- The Vertical NPN Bipolar Structure -- MOS Field-Effect Transistors -- The Metal Oxide Semiconductor System -- Junction Field-Effect Transistor -- Overview of Special-Purpose Semiconductor Devices -- Silicon Chip Technology and Fabrication Techniques -- Wafer formation -- Oxide Layers and Lithography -- Introduction of Dopant Atoms -- Metallization and Interconnect Steps -- Advanced Technology Bipolar Transistors -- Advanced Technology Mosfet Structures --
0-19-511477-9
Semiconductores
Semiconductors
621.38152 / R859a
An Introduction to the Physics of Semiconductor Devices / David J. Roulston - xvii, 290 p. : il. ; 25 cm. + 1 disco compacto (CD ROM) - Ingeniería de Sistemas y Series Eléctricas .
Overview -- Introductory Remarks -- History of semiconductor devices -- Material Prperties and Basic P-N Junction Relations -- The Semiconductor in Thermal Equilibrium -- P-N Junction Diodes -- The P+-N Narrow-Base Diode -- Low Forward Bias -- Bipolar Junction Transistor -- The Vertical NPN Bipolar Structure -- MOS Field-Effect Transistors -- The Metal Oxide Semiconductor System -- Junction Field-Effect Transistor -- Overview of Special-Purpose Semiconductor Devices -- Silicon Chip Technology and Fabrication Techniques -- Wafer formation -- Oxide Layers and Lithography -- Introduction of Dopant Atoms -- Metallization and Interconnect Steps -- Advanced Technology Bipolar Transistors -- Advanced Technology Mosfet Structures --
0-19-511477-9
Semiconductores
Semiconductors
621.38152 / R859a